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GenX3TM 600V IGBT
High Speed PT IGBTs for 40-100kHz switching
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
VCES = IC110 = VCE(sat) tfi(typ) =
TO-263 (IXGA)
600V 48A 2.5V 38ns
Symbol
VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C ( Limited by Leads) TC = 110C TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load @ 600V TC = 25C
Maximum Ratings
600 600 20 30 75 48 250 30 300 ICM = 100 300 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ A W C C C C C Nm/lb.in. g g g
G C E G C (TAB) E G E (TAB)
TO-247 (IXGH)
TO-220 (IXGP)
(TAB)
G = Gate E = Emitter Features
C = Collector TAB = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-247&TO-220) TO-247 TO-220 TO-263
300 260 1.13/10 6.0 3.0 2.5
Optimized for Low Switching Losses Square RBSOA Avalanche Rated Fast Switching International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99953A(01/09)
Symbol Test Conditions
(TJ = 25C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1 TJ = 125C TJ = 125C
Characteristic Values
Min. 600 3.0 5.5 Typ. Max. V V
25 A 250 A 100 nA 2.3 1.8 2.5 V V
(c) 2009 IXYS CORPORATION, All rights reserved
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) (TO-220) 0.21 0.50 Inductive Load, TJ = 125C IC = 30A, VGE = 15V VCE = 400V, RG = 3 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 400V, RG = 3 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
20 30 1960 207 66 77 16 32 19 26 0.41 60 38 0.23 19 26 0.65 92 95 0.57 0.42 100 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W C/W
TO-247 (IXGH) Outline
P
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
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TO-263 (IXGA) Outline
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
Fig. 1. Output Characteristics @ 25C
60 55 50 45 VGE = 15V 13V 11V 300 270 240 210 13V VGE = 15V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
40 35 30 25 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 7V 9V
180 150 120 90 60 30 0 0 2 4 6 8 10 12 14 16 18 20 7V 9V 11V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
60 55 50 45 VGE = 15V 13V 11V 1.2
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.1 I = 60A
VCE(sat) - Normalized
IC - Amperes
40 35 30 25 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 7V 9V
1.0 0.9 0.8 0.7 0.6 0.5 25 50 75 I
C
C
= 30A
I
C
= 15A
100
125
150
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.0 TJ = 25C 4.5 100 90 80 70 I 3.5
C
Fig. 6. Input Admittance
VCE - Volts
= 60A 30A 15A
IC - Amperes
4.0
60 50 40 30 20 10 TJ = -125C 25C - 40C
3.0
2.5
2.0 7 8 9 10 11 12 13 14 15
0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All rights reserved
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
Fig. 7. Transconductance
50 45 40 35 25C 125C 12 TJ = - 40C 14 16 VCE = 300V I C = 30A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90
VGE - Volts
10 8 6 4 2 0
100
110
120
0
10
20
30
40
50
60
70
80
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 110
Fig. 10. Reverse-Bias Safe Operating Area
100
f = 1 MHz
Cies
90 80
Capacitance - PicoFarads
IC - Amperes
1,000
70 60 50 40 30 TJ = 125C RG = 3 dV / dt < 10V / ns
Coes 100
Cres
20 10
10 0
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5
10
15
20
25
30
35
40
0 200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60C3(5D)1-23-09-B
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
2.4 Eoff 2.0 VCE = 400V Eon 2.6 2.0 1.8 2.2 1.6 Eoff VCE = 400V Eon
Fig. 13. Inductive Swiching Energy Loss vs. Collector Current
2.0
---
----
1.8 1.6 1.4
TJ = 125C , VGE = 15V
RG = 3 , VGE = 15V
Eoff - MilliJoules
1.6
I
C
= 60A
1.8
Eoff - MilliJoules
1.4 1.2 1.0 0.8 0.6 0.4 0.2 TJ = 125C, 25C
E
E - MilliJoules
on
on
1.2 1.0 0.8 0.6 0.4 0.2 0.0 15 20 25 30 35 40 45 50 55 60
- MilliJoules
1.2
1.4
0.8
I C = 30A
1.0
0.4
I C = 15A
0.6
0.0 0 5 10 15 20 25 30 35
0.2
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature
2.0 1.8 1.6 Eoff VCE = 400V Eon 2.0 130 125 120 115
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
350 1.8 1.6
----
RG = 3 , VGE = 15V
I C = 60A
tf
VCE = 400V I = 60A
td(off) - - - -
325 300 275 250 225
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eoff - MilliJoules
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 35 45 55 65 75 85 95 I C = 15A 105 115 I C = 30A
1.4
110 105 100 95 90 85 I
C
E - MilliJoules
on
1.2 1.0 0.8 0.6 0.4 0.2 0.0 125
C
I
C
= 30A
200 175 150
= 15A
125 100 75 50
80 75 70 0 5 10 15 20 25 30 35
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
140 130 120 110 110 160 140 120 100 80
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
120 105 100 95 90
tf
VCE = 400V
td(off) - - - -
RG = 3 , VGE = 15V
tf
td(off) - - - -
RG = 3 , VGE = 15V VCE = 400V
110
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
100 90 80 70 60 50 40 30 20 15 20 25 30 35 40 45 50 55 60 TJ = 25C TJ = 125C
85 80 75 70 65 60 55 50
t f - Nanoseconds
100 I = 60A 90 80
C
I 60 40 20 25 35 45
C
= 30A I
C
= 15A
70 60 50 125
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All rights reserved
IXGA48N60C3 IXGH48N60C3 IXGP48N60C3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
140 120 100 80 60 40 20 I 0 0 5
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
50 110 100 90 26
tr
VCE = 400V
td(on) - - - -
TJ = 125C, VGE = 15V
45
tr
td(on) - - - -
25 24
RG = 3 , VGE = 15V VCE = 400V 25C < TJ < 125C
t d(on) - Nanoseconds
t r - Nanoseconds
I
C
= 60A 35 30 25 20
t r - Nanoseconds
40
80 70 60 50 40 30 20 10
23 22 21 20 19 18 17 16 15
t d(on) - Nanoseconds
= 15A, 30A 15 10 15 20 25 30 35
0 15 20 25 30 35 40 45 50 55 60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
80 70 60 I C = 60A 25 24 23 22 21 I
C
t d(on) - Nanoseconds
t r - Nanoseconds
tr
td(on) - - - -
50 40 30 20 10 0 25
RG = 3 , VGE = 15V VCE = 400V
= 30A
20 19
I
C
= 15A
18 17 125
35
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
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IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60C3(5D)1-23-09-B

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